供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-07
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
描述
由其分销商提供的 ROHM UT6K3TCR 的描述。
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin DFN2020 Emboss T/R
Avnet Japan
2W 12V 1.5V@1mA 4nC@4.5V 2 N-Ch 30V 42mΩ@5A,4.5V 5.5A 450pF@15V HUML-2020L-8 SMD
Trans MOSFET N-CH 30V 5.5A 8-Pin HUML EP T/R
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.042ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual MOSFET N-Ch 30V 5.5A HUML2020L8
RS APAC
30V NCH+NCH MIDDLE POWER MOSFET
MOSFET, DUAL N-CH, 30V, 5.5A, 2W; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Number of Terminals6
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vds)30 V
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2