描述
由其分销商提供的 ROHM US6K1TR 的描述。
Transistor MOSFET Array Dual N-CH 30V 1.5A 6-Pin SOT-363 Emboss T/R
Dual N-Channel 30 V 340 mO 1 W Surface Mount 2.5 V Drive MosFet - TUMT-6
2.5 V DRIVE NCH+NCH MOSFET Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, Dual, Nn; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1W; Rohs Compliant: Yes |Rohm US6K1TR
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)1.5 A
Current Rating1.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance80 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Number of Elements2
PackagingCut Tape
Power Dissipation1 W
Rds On Max240 mΩ
Resistance340 MΩ
Rise Time9 ns
Threshold Voltage1.5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V