供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-27
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
onsemiNVTJD4001NT2G
Dual N-Channel Small Signal MOSFET 30V, 250mA, 1.5Ω Automotive Version of the NTJD4001N
描述
由其分销商提供的 ROHM UM6J1NTN 的描述。
Transistor MOSFET Array Dual P-CH 30V 200mA 6-Pin SOT-363 Emboss T/R
4 V DRIVE PCH MOSFET Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL P-CH, -30V, SOT-363; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -200mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)30 V
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance30 pF
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape (CT)
Rds On Max1.4 Ω
Rise Time5 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns