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VishaySI5935CDC-T1-GE3
SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
描述
由其分销商提供的 ROHM RZF030P01TL 的描述。
RZF030P01 Series 12 V 3 A 18 nC Surface Mount P-Channel Mosfet - TUMT-3
800mW(Ta) 10V 1V@1mA 18nC@ 4.5 V 1P 12V 39m¦¸@ 3A,4.5V 3A 1.86nF@6V SOT-323T-3 2mm*1.7mm*770¦Ìm
Trans MOSFET P-CH 12V 3A 3-Pin TUMT T/R
Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 12V, 3A, TUMT3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -300mV; P
Mosfet, P Channel, 12V, 3A, Tumt3; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-3A; Tensión Drenaje-Fuente Vds:-12V; Resistencia De Activación Rds(On):0.028Ohm; Tensión Vgs De Medición Rds(On):-4.5V |Rohm RZF030P01TL
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.86 nF
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-300 mV
Number of Elements1
Power Dissipation800 mW
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time40 ns
Threshold Voltage-300 mV
Turn-Off Delay Time210 ns
Turn-On Delay Time9 ns
Dimensions
Height770 µm
Length2 mm
Width1.7 mm