供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 ROHM RYM002N05T2CL 的描述。
RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723
Trans MOSFET N-CH 50V ±0.2A 3-Pin SOT-723 T/R
Avnet Japan
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ROHM NMOS, Vds=50 V, 200 mA, SOT-723
Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV; Power Dissipation:150mW; Product Range:- RoHS Compliant: Yes
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance2.8 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance26 pF
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max2.2 Ω
Rise Time8 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time5 ns