供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-02
Lifecycle StatusNRND (Last Updated: 1 month ago)
描述
由其分销商提供的 ROHM RUF025N02TL 的描述。
Trans MOSFET N-CH 20V 2.5A 3-Pin TUMT T/R
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ROHM NMOS RUF025N02, Vds=20 V, 2.5 A, SOT-323, , 3
MOSFET, N-CH, 20V, 2.5A, TUMT3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 300mV; P
Mosfet, N Channel, 20V, 2.5A, Tumt3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.5A; Tensión Drenaje-Fuente Vds:20V; Resistencia De Activación Rds(On):0.039Ohm; Tensión Vgs De Medición Rds(On):4.5V |Rohm RUF025N02TL
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance370 pF
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage20 V
Nominal Vgs300 mV
Number of Elements1
Power Dissipation800 mW
Rds On Max54 mΩ
Rise Time15 ns
Threshold Voltage300 mV
Turn-Off Delay Time35 ns
Turn-On Delay Time7 ns
Dimensions
Height820 µm
Length2.1 mm
Width1.8 mm