ROHM RGWS60TS65GC13

Name: ROHM RGWS60TS65GC13
Brand: ROHM
SKU: RGWS60TS65GC13

Trans IGBT Chip N-CH 650V 51A 156W 3-Pin(3+Tab) TO-247N Tube

$ 1.418

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
CoreStaff		ST47333436	120	1		2.150	1.941	1.380	1.324	1.324	18h
Verical	2	RGWS60TS65GC13	115	2			1.418	1.418	1.418	1.418
Arrow Electronics		RGWS60TS65GC13	115	1		1.022	1.022	1.022	1.022	1.022
Newark		RGWS60TS65GC13	594	1		3.110	2.440	2.440	2.440	2.440
DigiKey		846-RGWS60TS65GC13-ND	589	1	Tube	3.020	3.020	1.626	1.137	1.137

数据表和文档

下载 ROHM RGWS60TS65GC13 的数据表和制造商文档。

Newark

Datasheet11 页4 年前

库存历史记录

3 个月趋势:

-3.18%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-09-07

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 ROHM RGWS60TS65GC13 的描述。

Trans IGBT Chip N-CH 650V 51A 156W 3-Pin(3+Tab) TO-247N Tube

Verical

Insulated Gate Bipolar Transistor, 51A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

High-Speed Fast 650V 30A Trench IGBT

RS APAC

TRANS, IGBT, 1.6V, 51A, 156W, TO-247GE;

Farnell

IGBT TRNCH FIELD 650V 51A TO247G

Easev

IGBT TRENCH FS 650V 51A TO-247G

DigiKey

IGBT, SINGLE, 30V, 51A, TO-247GE; Continuous Collector Current:51A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:156W; Collector Emitter Voltage Max:30V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark