ROHM RGW80TK65DGVC11

Name: ROHM RGW80TK65DGVC11
Brand: ROHM
SKU: RGW80TK65DGVC11

Trans IGBT Chip N-CH 650V 39A 3-Pin TO-3PFM Tube

$ 3.133

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
CoreStaff		ST40246022	30	1		3.862	2.990	2.430	2.388	2.388	16h
Arrow Electronics		RGW80TK65DGVC11	30	1		1.836	1.836	1.836	1.836	1.836
Verical	2	RGW80TK65DGVC11	30	1		2.547	2.547	2.547	2.547	2.547
DigiKey		RGW80TK65DGVC11-ND	437	1	Tube	8.150	8.150	4.719	3.964	3.964
Newark		RGW80TK65DGVC11	0	1		7.840	4.460	3.830	3.830	3.830

数据表和文档

下载 ROHM RGW80TK65DGVC11 的数据表和制造商文档。

IHS

Datasheet12 页8 年前

库存历史记录

3 个月趋势:

+0.00%

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Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 ROHM RGW80TK65DGVC11 的描述。

Trans IGBT Chip N-CH 650V 39A 3-Pin TO-3PFM Tube

Avnet

Insulated Gate Bipolar Transistor, 39A I(C), 650V V(BR)CES, N-Channel

IHS

IGBT TRNCH FIELD 650V 39A TO3PFM

Easev

IGBT TRENCH FS 650V 39A TO-3PFM

DigiKey

650V 40A FIELD STOP TRENCH IGBT

Vigor Components

TO-3PFMP 650V 40A FS TREN IGBT

Anglia

IGBT, SINGLE, 650V, 39A, TO-3PFM; DC Collector Current: 39A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 81W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PFM; No. of Pins

Farnell

Igbt, Single, 650V, 39A, To-3Pfm; Continuous Collector Current:39A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:81W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Rohm RGW80TK65DGVC11

Newark