供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-23
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
描述
由其分销商提供的 ROHM RGPZ10BM40FHTL 的描述。
Trans IGBT Chip N-CH 460V 20A 107000mW Automotive 3-Pin(2+Tab) DPAK T/R
Insulated Gate Bipolar Transistor, 20A I(C), 460V V(BR)CES, N-Channel, TO-252
IGBT / IGBT 460 V 20 A 107 W Surface Mount TO-252
Transistor I GBT N-CH 430V 20A 3-Pin TO-252 T/R
107W 1.7V Discrete 460V 20A TO-252 SMD
IGNITION IGBT 430V 20A TO-252 AEC-Q101; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 107W; Collector Emitter Voltage V(br)ceo: 460V; Transistor Case Style: TO-252; No. o
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Number of Terminals2
Technical
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)460 V
Fall Time6 µs
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Operating Temperature-40 °C
Number of Elements1
Rise Time500 ns