价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CoreStaff | ST31560117 | 46 | 1 | 21h | ||||||||
| Verical | R6002ENDTL | 46 | 46 | |||||||||
| Farnell | R6002ENDTL | 0 | 1 | Cut Tape | 2h | |||||||
| Microchip USA | R6002ENDTL | 2,061 | 3K | Tray | 3d | |||||||
| Win Source | WS-R6002ENDTL | 2,458 | 145 | 4h |
相关零件
InfineonIPD50R3K0CEAUMA1
IPD50R3K0CE: 500 V 1.7 A 3 Ohm SMT CoolMOS CE Power Transistor - PG-TO252-3
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
VishaySIHD3N50D-E3
MOSFET N-CH 500V 3A DPAK / N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
描述
由其分销商提供的 ROHM R6002ENDTL 的描述。
Trans MOSFET N-CH 600V ±1.7A 3-Pin TO-252 Embossed Tape and Reel
Trans MOSFET N-CH 600V 1.7A 3-Pin(2+Tab) CPT T/R
20W(Tc) 20V 4V@1mA 6.5nC@ 10V 1N 600V 3.4¦¸@ 500mA,10V 1.7A 65pF@25V TO-252-3
MOSFET, N-CH, 600V, 1.7A, TO-252
Power Field-Effect Transistor, 1.7A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET Nch 600V 2A Power MOSFET
Mosfet, N-Ch, 600V, 1.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):2.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)600 V
Input Capacitance65 pF
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage600 V
Number of Elements1
Rds On Max3.4 Ω
Threshold Voltage4 V