供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-10-08
Lifecycle StatusNRND (Last Updated: 4 months ago)
描述
由其分销商提供的 ROHM QS8J2TR 的描述。
MOSFET 2P-CH 12V 4A TSMT8 / Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8
Transistor MOSFET Array Dual P-CH 12V 4A 8-Pin TSMT Emboss T/R
12V 4A 36mΩ@4A,4.5V 1V@1mA 2 P-Channel 1940pF@6V 20nC@4.5V +150℃@(Tj) TSMT-8 MOSFETs ROHS
Trans MOSFET P-CH Si 12V 4A Automotive 8-Pin TSMT T/R
1.5W 10V 1V@1mA 20nC@ 4.5V 2P 12V 36m¦¸@ 4A,4.5V 4A 1.94nF@6V TSMT-8 800¦Ìm
Power Field-Effect Transistor, 4A I(D), 12V, 0.036ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, P-CH, 150 DEG C;
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationDual
Fall Time180 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.94 nF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape & Reel
Rds On Max36 mΩ
Rise Time60 ns
Turn-Off Delay Time300 ns
Turn-On Delay Time10 ns