由其分销商提供的 ROHM EMD22T2R 的描述。
Bipolar (BJT) Array Transistor, NPN, PNP, 50 V, 150 mW, 100 mA, 80, EMT RoHS Compliant: Yes
Bipolar Transistors (BJT); EMD22T2R; ROHM; NPN, PNP; 6; 50 V; 100 mA
EMD22 Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - EMT-6
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
80@10mA,5V 1 NPN,1 PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-563 Digital Transistors ROHS
Trans Digital BJT NPN/PNP 100mA 6-Pin EMT T/R
Dig.Transistor NPN/PNP 50V 4.7K-47K EMT6
RS APAC
Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1 (Unlimited) Tape & Reel (TR) SOT-563, SOT-666 1 NPN, 1 PNP - Pre-Biased (Dual) Surface Mount 4.7k Ω 80 @ 10mA 5V 300mV @ 250μA, 2.5mA 500nA TRANS NPN/PNP PREBIAS 0.15W EMT6
TRANSISTOR DUAL DIGITAL; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: EMT; No. of Pins: 6 Pin; Product Range: EMD22 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: EMT; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz