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描述
由其分销商提供的 ROHM BSM120D12P2C005 的描述。
Transistor MOSFET Array Dual N-CH 1200V 134A 10-Pin Case C Cardboard
MOSFET 2N-CH 1200V 120A MODULE
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
ROHM NSiC BSM, Vds=1200 V, 120 A, C, , 4
MODULE, POWER, SIC, 1200V, 120A; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): -; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 2.7V; Power Dis
SIC MOSFET, N-CH, 1.2KV, 120A, MODULE-10; MOSFET Module Configuration:Half Bridge; Channel Type:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:1.2kV; No. of Pins:10Pins; Rds(on) Test Voltage:-; Product Range:- RoHS Compliant: Yes
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageModule
MountScrew
Number of Pins10
Number of Terminals8
Technical
Continuous Drain Current (ID)120 A
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)22 V
Input Capacitance14 nF
Max Operating Temperature150 °C
Max Power Dissipation780 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-40 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements2
Threshold Voltage2.7 V
Dimensions
Height21.1 mm
Length122 mm
Width45.6 mm