描述
由其分销商提供的 ROHM 2SCR562F3TR 的描述。
Power Bipolar Transistor, 6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN 30V 6A 1W DFN2020-3S
Transistor GP BJT NPN 30V 6A 3-Pin DFN2020 T/R
TRANSISTOR, NPN, 30V, 6A, HUML2020; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 270MHz; Power Dissipation Pd: 1W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transisto
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
MountSurface Mount
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage220 mV
Collector Emitter Voltage (VCEO)30 V
Emitter Base Voltage (VEBO)6 V
hFE Min200
Max Collector Current6 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Number of Elements1
PolarityNPN
Power Dissipation1 W
Transition Frequency270 MHz
Dimensions
Height650 µm