Rochester Electronics IRGP4760DPBF

Name: Rochester Electronics IRGP4760DPBF
Brand: Rochester Electronics
SKU: IRGP4760DPBF

Igbt With Recovery Diode / Igbt 650 V 90 A 325 W Through Hole TO-247AC

$ 3.98

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRGP4760DPBF	2,375					3.600	3.220	3.030	11h
DigiKey Marketplace		2156-IRGP4760DPBF-IR-ND	75	63	Tube			4.740	4.740	4.740
Component Stockers USA		IRGP4760DPBF	55			4.070	4.070	3.830	3.460	3.460	1d
Win Source		WS-IRGP4760DPBF	20	1		54.087	36.058	36.058	36.058	36.058	12h
Esaler Electronic		IRGP4760DPBF	63			4.740	4.693	4.647	4.601	4.555	12h

数据表和文档

下载 Rochester Electronics IRGP4760DPBF 的数据表和制造商文档。

IHS

Datasheet12 页11 年前

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-07-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2017-03-16

LTD Date2017-09-16

描述

由其分销商提供的 Rochester Electronics IRGP4760DPBF 的描述。

IGBT WITH RECOVERY DIODE / IGBT 650 V 90 A 325 W Through Hole TO-247AC

Win Source

Trans IGBT Chip N-CH 650V 90A 325W 3-Pin(3+Tab) TO-247AC Tube

Verical

Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, TO-247AC

IHS

IRGP4760 DISCRETE IGBT WITH ANTI-PARALL;

Farnell

G6.2, 650V, 60A, CO-PAK-247AC, TUBE

Newark

Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant

Infineon