Rochester Electronics IRF240

200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:10V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):0.18ohm; Rds(on) Test Voltage, Vgs:200V; Package/Case:TO-204AE ;RoHS Compliant: No

MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:200V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (18-Jun-2012); Avalanche Single Pulse Energy Eas:450mJ; Current Iar:18A; Current Id Max:18A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:72A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.012kg