Rochester Electronics FDN358P

1500MA, 30V, P-channel, Si, Small Signal, Mosfet, SUPERSOT-3

数据表

制造商页面

提交询价

遗憾的是，我们不知道FDN358P的任何分销商。如果您有已知的分销商，请告知我们，以便我们将其添加到数据库中，或向我们的合作伙伴之一询价。

向一些专门寻找罕见零件的分销商提交询价。

询价请求（RFQ）

此请求将被发送给指定的供应商。
(* 表示必填字段)

Datasheet5 页23 年前

CAD 模型

从我们值得信赖的合作伙伴处下载 Rochester Electronics FDN358P 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

描述

由其分销商提供的 Rochester Electronics FDN358P 的描述。

1500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3

Utmel Electronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:1.5A; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes

Newark

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Fairchild Semiconductor

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:560mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.5A; Current Temperature:25°C; Device Marking:FDN358P; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:560mW; Power Dissipation Pd:560mW; Pulse Current Idm:5A; SMD Marking:358; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.9V; Voltage Vgs Rds on Measurement:-10V

element14 APAC