Rochester Electronics FDN336P

Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R

MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.