供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
相关零件
InfineonBSP322P L6327
MOSFET, P-CH, 100V, 1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain
InfineonBSP317PL6327
MOSFET, P-CH, 250V, 430MA, SOT-223; Transistor Polarity:P Channel; Continuous Dr
描述
由其分销商提供的 Infineon BSP321P L6327 的描述。
Trans MOSFET P-CH 100V 0.98A Automotive 4-Pin(3+Tab) SOT-223 T/R
0.98 A 100 V 0.9 ohm P-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 0.98A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP321 SIPS SMALL-SIGNAL P-CHANNEL;
MOSFET, P-CH, 100V, 980MA, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-980mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.689ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)980 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance319 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max900 mΩ
Rise Time4.4 ns
Turn-Off Delay Time16.5 ns
Turn-On Delay Time5.9 ns