供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Introduction Date2024-10-03
Lifecycle StatusProduction (Last Updated: 3 months ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 months ago)
描述
由其分销商提供的 Renesas TP65H070G4PS 的描述。
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Through Hole
GAN TRANSISTOR, 650V, 29A, TO-220AB-3;
650V 70mΩ SuperGaN FET in TO-220
Gan Transistor, 650V, 29 A, To-220Ab-3; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Typical Gate Charge:9Nc; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:Supergan Series; Qualification:- Rohs Compliant: Yes |Renesas Electronics Corporation TP65H070G4PS
制造商别名
Renesas 在全球拥有多个品牌，分销商可将其用作替代名称。Renesas 也可称为以下名称：
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
技术规格
Physical
Case/PackageTO-220
MSL1
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)29 A
Drain to Source Resistance85 mΩ
Part FamilyTP65H070G4PS
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1