价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Nexxon Inc. (USA) | NP90N055VDG-E2-AY | 联系方式 | >1wk |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 month ago)
描述
由其分销商提供的 Renesas NP90N055VDG-E2-AY 的描述。
90 A 55 V 0.006 ohm N-CHANNEL Si POWER MOSFET TO-252
Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Power MOSFETs for Automotive
制造商别名
Renesas 在全球拥有多个品牌，分销商可将其用作替代名称。Renesas 也可称为以下名称：
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
技术规格
Physical
MSL1
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance6 mΩ
Part FamilyNP90N055VDG
Max Operating Temperature175 °C
Max Power Dissipation105 W
Min Breakdown Voltage55 V
Number of Elements1
Dimensions
Height2.65 mm
Length6 mm
Width6 mm