Renesas ISL2111ARTZ-T

NO LEAD RoHS Compliant Active Matte Tin (Sn) - annealed IC Gate Driver 4mm 114V 3.1W 4A

9ns 2 8V 50ns 14V 1.4V,2.2V Non-Inverting MOSFET,N 7.5ns 3A,4A TDFN-10(EP) , 4mm*4mm*720¦Ìm

Half Bridge MOSFET 3A 8V~14V 4A WSON-10-EP(4x4) Gate Drive ICs ROHS

GATE DRIVER, MOSFET, -40 TO 125DEG C;

Gate Drivers 100V/4A H-BRDG DRVR 10LD 4X4 TTL INPU

ISL2111 Series Half-Bridge Surface Mount Switching Regulator - TDFN-10

Half Bridge Based MOSFET Driver, 4A, PDSO10

100V, 3A/4A Peak, High Frequency Half-Bridge Drivers

IC GATE DRVR HALF-BRIDGE 10TDFN

HaBr FETDr 3.0A 100V TDFN12 SMD

IC, MOSFET DRVR - More Details

IC MSFT DVR HALF-BRG 100V 10TDFN

栅极驱动器, 场效应管, MOSFET, -40 至 125度;

IC, MOSFET DRVR; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:3A; Supply Voltage Range:8V to 14V; Driver Case Style:DFN; No. of Pins:10; Input Delay:38ns; Output Delay:32ns; Output Resistance:1.6ohm ;RoHS Compliant: Yes

The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail.