价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Renesas | HIP2100EIBZ | 1,297 | 1 | Tube | 19h | |||||||
| Avnet | HIP2100EIBZ | 659 | 1960 | 6d | ||||||||
| DigiKey | HIP2100EIBZ-ND | 1,297 | 1 | Tube | ||||||||
| Future Electronics | HIP2100EIBZ | 0 | 980 | Tube | ||||||||
| Newark | HIP2100EIBZ | 0 | 980 |
CAD 模型
引脚表
编号
类别
显示名称和功能
模型信息
| 来源 | Renesas |
|---|---|
| 发布日期 | Aug 12, 2025 |
| 符合 IPC 标准 | IPC-7351B |
| 风格指南修订 | 版本 1.0 - Nov 1, 2024 |
| 数据表来源 | 版本 16.00 - Aug 8, 2019 |
验证
根据该零件的样式指南和数据表，三位独立的电子工程专家创建了：
- 3 个版本的符号和 2D 封装
- 1 个版本的 3D STEP 模型（STEP 格式 AP-214）
- 制造商调色板配置
所有创建的库文件都与图层映射无关，可轻松映射到设计中。
然后通过以下检查对创建的符号和封装进行比较：
符号
自动检查
- 零件编号
- 关键参数
- 包装代码
- 引脚名称/编号
- 引脚类型
手动检查
- 根据样式指南整理引脚
封装
自动检查
- IPC 标准
- 丝印间隙
- Courtyard 超额
- 包装外形
- 极性标记
- 焊盘尺寸和位置验证
3D STEP 模型
手动检查
- 尺寸验证
- 调色板合规性
- 格式合规性
- 将方向映射到 2D 封装
- 2D 封装位置验证
进行最终验证过程：
如果符号和封装匹配：零件已验证为 ECAD 就绪
如果符号和封装不匹配：高级电子工程师将审查所有差异，确保零件符合样式指南和数据表要求
供应链
Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8540000000
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
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7.5ns 2 4.5V 25ns 15V 800mV,2.4V Inverting MOSFET,N,P 10ns 2A,2A SOIC-8 , 4.9mm*3.9mm*1.45mm
描述
由其分销商提供的 Renesas HIP2100EIBZ 的描述。
Driver 2A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC N EP Tube
HIP2100 Series 100V/2A Peak, Low Cost, High FreqHalf Bridge Driver-SOIC
100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs
GULL WING RoHS Compliant Active Matte Tin (Sn) - annealed IC Gate Driver 3.9mm 114V 3.1W 2A
No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:MOSFET; No. of Pins:8Pins; Driver Case Style:SOIC; Input Type:Non-Inverting; Source Current:2A; Sink Current:2A; Supply Voltage Min:9V RoHS Compliant: Yes
制造商别名
Renesas 在全球拥有多个品牌，分销商可将其用作替代名称。Renesas 也可称为以下名称：
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
技术规格
Physical
Case/PackageSOIC
MSL2
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Fall Time10 ns
Part FamilyHIP2100
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Output Current2 A
Max Power Dissipation400 mW
Max Supply Current3 mA
Max Supply Voltage14 V
Min Operating Temperature-40 °C
Min Supply Voltage9 V
Nominal Supply Current1.5 mA
Number of Circuits1
Number of Drivers2
Number of Outputs1
Operating Supply Voltage12 V
Output Current2 A
Output Voltage100 V
Overload ProtectionSupply Undervoltage
PackagingBulk
Power Dissipation400 mW
Propagation Delay20 ns
RAM Size48 kB
Rise Time10 ns
Schedule B8542390000
Temperature GradeAutomotive
Turn-Off Delay Time2 ns
Turn-On Delay Time2 ns
Dimensions
Height0 m
Height - Seated (Max)1.68 mm
Length4.9 mm
Pitch1.3 mm
Terminal Pitch1.27 mm
Width3.9 mm
文档
下载 Renesas HIP2100EIBZ 的数据表和制造商文档。
官方数据表6 年前