供应链
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
OptekOPB830W55Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
OptekOPB840W51Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
描述
由其分销商提供的 Optek OPB840W55Z 的描述。
880nm Through-Beam 3.18mm 20ms Phototransistor 30V wire mounting，base mount 16.13mm(height)
OPB840W Series 30 V 880 nm 50 mA Phototransistor Slotted Optical Switch
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
SENSOR, SLOTTED OPTICAL SWITCH, 3,18MM SLOT, 2V EMITTER, 30V DETECTOR, 880NM
Transistor Output Slotted Switch, 1-Channel, 3.18mm Slot Width
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin Bag
SMD Photointerrupters - Slot Type - Transistor Output ROHS
SENSOR OPT SLOT PHOTOTRANS MODUL / Optical Sensor Through-Beam 0.125" (3.18mm) Phototransistor Module, Pre-Wired
PHOTO INTERRUPTERS - TRANSMISSIVE;
SENSOR OPT SLOT PHOTOTRANS MODUL
PHOTO INTERRUPTER, THROUGH BEAM, 3.18MM; Sensing Method:Through Beam; Sensing Distance / Slot Width:3.18mm; Supply Voltage Min:-; Supply Voltage Max:-; Sensor Case / Package:Module; Collector Emitter Voltage Max:30V; IP
Optoswitch, Phototransistor; Sensor Output:Fototransistor; Corriente Directa If:50Ma; Tensión Directa:1.7V; Tensión Inversa Vr:2V; Anchura De Apertura:1.27Mm; Anchura Del Espacio/Hueco:3.18Mm; Sensor, Montaje:Panel/Chassis |Tt Electronics / Optek Technology OPB840W55Z
制造商别名
Optek 在全球拥有多个品牌，分销商可将其用作替代名称。Optek 也可称为以下名称：
- OPTEK TECHNOLOGY
- TT Electronics/Optek Technology
- OPTEK TECHNOLOGY INC
- OPT
- OPTE
- OPTEK TECH
- OPTEC
- OPTK
- Optek / TT Electronics
- Optek Technology/TT Electronics
- TT Electronics - Optek
- TT Optek
- OPTEK TEC
- OPTEK Technologies
- C- OPTEK
- OPTEK TECHNOLOG
- C-OPTEKTECH
- OPTEK MIL
- OPTEK TECH INC
- Kyocera Optrex
- BEDFORD OPTO TECHNOLOGY LTD
- OPTEK INC
技术规格
Physical
MountChassis Mount, Screw
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.7 V
Input Current20 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature80 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Voltage30 V
PackagingBulk
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Reverse Voltage (DC)2 V
Sensing Distance3.175 mm
Wavelength880 nm