供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2000-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi QRD1114 的描述。
QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor
OPTO SWITCH, REFLECTIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; Operating Temperature Range:-40°C to +85°C; Output Type:Phototransistor
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins4
Weight0 g
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating20 mA
Fall Time50 µs
Forward Current50 mA
Forward Voltage1.7 V
Input Current20 mA
Max Collector Current1 mA
Max Operating Temperature85 °C
Max Output Current5 mA
Max Output Voltage30 V
Max Power Dissipation100 mW
Max Supply Voltage1.7 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage1.7 V
Output TypePhototransistor
Output Voltage30 V
PackagingBulk
Power Dissipation100 mW
Response Time10 µs
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Rise Time10 µs
Schedule B8541408000
Sensing Distance1.27 mm
Wavelength940 nm
Dimensions
Height4.65 mm
Length6.1 mm
Width4.39 mm