Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating40 mA
Fall Time8 µs
Forward Current40 mA
Forward Voltage1.7 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Output Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage1.7 V
Output TypePhototransistor
PackagingBulk
Power Dissipation100 mW
Response Time8 µs
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Rise Time8 µs
Sensing Distance3.81 mm
TerminationSolder
Wavelength940 nm