onsemi PZT651T1G

Name: onsemi PZT651T1G
Brand: onsemi
SKU: PZT651T1G

Bipolar (BJT) Single Transistor, NPN, 60 V, 2 A, 800 mW, SOT-223, Surface Mount

$ 0.222

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制造商页面数据表

价格与库存

授权分销商

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Distributor		SKU		Min	Pkg
Avnet		PZT651T1G	76,000	1K					0.181	0.170	1d
Future Electronics	4	PZT651T1G	11,000	1K	Tape & Reel				0.240	0.230
Newark	3	PZT651T1G	1,982	1	Cut Tape	0.865	0.540	0.349	0.267	0.267
Arrow Electronics	4	PZT651T1G	221,730	1		0.135	0.135	0.135	0.135	0.135
Verical	4	PZT651T1G	221,730	43				0.135	0.135	0.135

数据表和文档

下载 onsemi PZT651T1G 的数据表和制造商文档。

IHS

Datasheet6 页3 年前

Newark

Farnell

onsemi

Master Electronics

库存历史记录

3 个月趋势:

-2.70%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-12-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi PZT651T1G 的描述。

Bipolar (BJT) Single Transistor, NPN, 60 V, 2 A, 800 mW, SOT-223, Surface Mount

Avnet Silica

60V 800mW 75@1A,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS

Dasenic

Bipolar Transistors (BJT); PZT651T1G; ON SEMICONDUCTOR; NPN; 4; 60 V; 2 A

Maritex

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA

IHS

PZT Series 60 V 2 A SMT NPN Silicon Planar Epitaxial Transistor - SOT-223

Future Electronics

Trans GP BJT NPN 60V 2A Automotive 4-Pin(3+Tab) SOT-223 T/R

Jak Electronics

500mV@ 200mA,2A NPN 800mW 5V 100nA 80V 60V 2A SOT-223 6.5mm*3.5mm*1.63mm

UnikeyIC

General Purpose Transistors NPN Ic=2A Vceo=60V hfe=40 P=800mW SOT223

HQonline

This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

North Star Micro

BIPOLAR TRANSISTOR, NPN, 60V; TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 800mW; DC Collector Current: 2A; DC Current Gain hFE: 75hFE; Tr

Farnell

BIPOLAR TRANSISTOR, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:2A; Power Dissipation:800mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:75MHz RoHS Compliant: Yes

Newark