供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1979-06-29
Lifecycle StatusProduction (Last Updated: 7 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
相关零件
onsemiKSB1116SYBU
Bulk Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
描述
由其分销商提供的 onsemi PN3645 的描述。
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 10V 800mA 625mW 60V
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 60V 0.8A 3-Pin TO-92 Bulk
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):20; Package/Case:TO-92; C-E Breakdown Voltage:60V; DC Collector Current:0.8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.
TRANSISTOR, DUAL P TO-92; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:300mA; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92; Transistor Type:General Purpose
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating-300 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min20
Max Collector Current800 mA
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
Transition Frequency200 MHz
Voltage Rating (DC)-60 V