供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1979-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
描述
由其分销商提供的 onsemi PN3643 的描述。
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 500mA 625mW 250MHz
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 30V 0.5A 3-Pin TO-92 Bulk
BIPOLAR TRANSISTOR, NPN, 30V; Transistor
NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA.
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Power Dissipation, Pd:625mW; DC Collector Current:500mA; DC Current Gain Max (hfe):100; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage220 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product250 MHz
hFE Min20
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency250 MHz
Voltage Rating (DC)45 V