onsemi NXH80B120MNQ0SNG

Name: onsemi NXH80B120MNQ0SNG
Brand: onsemi
SKU: NXH80B120MNQ0SNG

Dual-Channel 1200 V 69 A 80 mOhm 69 W SiC Dual Boost Power Module - Q0BOOST

$ 51.886

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价格与库存

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Distributor		SKU		Min	Pkg
Future Electronics		NXH80B120MNQ0SNG	24	24	Tray			53.270	52.830	52.830
Newark	2	NXH80B120MNQ0SNG	24	1		58.010	54.830	50.030	50.030	50.030
Verical	2	NXH80B120MNQ0SNG	72	24				51.782	51.782	51.782
Arrow Electronics		NXH80B120MNQ0SNG	3	24				51.782	51.782	51.782
Rochester Electronics		NXH80B120MNQ0SNG	1,176					51.880	46.420	43.690	1h

数据表和文档

下载 onsemi NXH80B120MNQ0SNG 的数据表和制造商文档。

IHS

Datasheet13 页3 年前

Newark

Future Electronics

库存历史记录

3 个月趋势:

+46.08%

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Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NXH80B120MNQ0SNG 的描述。

Dual-Channel 1200 V 69 A 80 mOhm 69 W SiC Dual Boost Power Module - Q0BOOST

Future Electronics

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

onsemi

Power Field-Effect Transistor, 23A I(D), 1200V, 0.11ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

IHS

Sic Mosfet, Dual N-Ch, 1.2Kv/23A, Module; Mosfet Module Configuration:Dualpack; Channel Type:Dual N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:22Pins; Rds(On) Test Voltage:20V Rohs Compliant: Yes |Onsemi NXH80B120MNQ0SNG

Newark