onsemi NXH450B100H4Q2F2PG

Name: onsemi NXH450B100H4Q2F2PG
Brand: onsemi
SKU: NXH450B100H4Q2F2PG

Insulated Gate Bipolar Transistor, 101A I(C), 1000V V(BR)CES, N-Channel

$ 129.25

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制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Newark	NXH450B100H4Q2F2PG	10	1		153.21	153.21	153.21	153.21	153.21
Verical	NXH450B100H4Q2F2PG	12	12				27.110	27.110	27.110
Arrow Electronics	NXH450B100H4Q2F2PG	12	12				27.110	27.110	27.110
DigiKey	5556-NXH450B100H4Q2F2PG-ND	35	1	Tray	153.91	153.91	130.15	130.15	130.15
Flip Electronics	NXH450B100H4Q2F2PG	144								>1wk

数据表和文档

下载 onsemi NXH450B100H4Q2F2PG 的数据表和制造商文档。

IHS

Datasheet14 页3 年前

Master Electronics

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-02-29

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NXH450B100H4Q2F2PG 的描述。

Insulated Gate Bipolar Transistor, 101A I(C), 1000V V(BR)CES, N-Channel

Semicontronic

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Press-fit pins

onsemi

1000 V 101 A 234 W IGBT Module Chassis Mount PIM56

Future Electronics

Trans IGBT Module N-CH 1000V 101A 234mW Tray

Verical

1000V,75A FSIII IGBT, MID SPEED

Jak Electronics

IGBT MOD 1000V 101A 234W 56-PIM

DigiKey

IGBT MODULE, 1KV, 101A; Continuous Collector Current:101A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:234W; Operating Temperature Max:175°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1kV RoHS Compliant: Yes

Newark