onsemi NXH300B100H4Q2F2SG

Name: onsemi NXH300B100H4Q2F2SG
Brand: onsemi
SKU: NXH300B100H4Q2F2SG

Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel

$ 121.545

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Distributor		SKU		Min	Pkg
Newark		NXH300B100H4Q2F2SG	36	1		143.22	143.22	143.22	143.22	143.22
Verical	2	NXH300B100H4Q2F2SG	36	12				121.42	121.42	121.42
Arrow Electronics		NXH300B100H4Q2F2SG	36	12				121.42	121.42	121.42
Rochester Electronics		NXH300B100H4Q2F2SG	2,883			116.42	116.42	109.43	102.45	102.45	11h
DigiKey		5556-NXH300B100H4Q2F2SG-ND	36	1	Tray	145.36	145.36	121.67	121.67	121.67

数据表和文档

下载 onsemi NXH300B100H4Q2F2SG 的数据表和制造商文档。

IHS

Datasheet14 页3 年前

Master Electronics

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-06-09

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NXH300B100H4Q2F2SG 的描述。

Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel

IHS

Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode

onsemi

Trans IGBT Module N-CH 1000V 73A 194mW Tray

Verical

MASS MARKET 250KW 1500V Q2 3 LEV

Easev

IGBT MOD 1118V 73A 194W 53-PIM

DigiKey

IGBT MODULE, 1KV, 73A; Continuous Collector Current:73A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:194W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1kV RoHS Compliant: Yes

Newark