价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | NVMFS5C628NLT1G | 1,320 | 1 | Cut Tape | ||||||||
| DigiKey | 488-NVMFS5C628NLT1GCT-ND | 1,232 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | NVMFS5C628NLT1G | 0 | 375 | Bulk | ||||||||
| Avnet | NVMFS5C628NLT1G | 0 | 1500 | 2d | ||||||||
| Master Electronics | NVMFS5C628NLT1G | 0 | 375 |
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-01
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
相关零件
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描述
由其分销商提供的 onsemi NVMFS5C628NLT1G 的描述。
Single N-Channel Power Mosfet 60V, 150A, 2.4M/Reel Rohs Compliant: Yes |Onsemi NVMFS5C628NLT1G
Single N-Channel Power MOSFET 60V, 150A, 2.4mΩ
Trans MOSFET N-CH 60V 28A Automotive 5-Pin(4+Tab) SO-FL T/R
MOSFET N-CH 60V 5DFN / N-Channel 60 V 150A (Tc) 3.7W (Ta), 110W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Power Field-Effect Transistor, 150A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.7W(Ta),110W(Tc) 20V 2V@ 135¦ÌA 52nC@ 10 V 1N 60V 2.4m¦¸@ 50A,10V 150A 3.6nF@25V SO 4.9mm*5.9mm*1.05mm
MOSFET, AEC-Q101, N-CH, 60V, 150A, DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 150A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Technical
Continuous Drain Current (ID)150 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max2.4 mΩ
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm