价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTR4170NT1G | 30,000 | 3K | 1d | ||||||||
| Newark | NTR4170NT1G | 1,645 | 1 | Cut Tape | ||||||||
| Verical | NTR4170NT1G | 309,000 | 3K | |||||||||
| Arrow Electronics | NTR4170NT1G | 9,048 | 1 | |||||||||
| Future Electronics | NTR4170NT1G | 3,000 | 3K | Tape & Reel |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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VishaySI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
描述
由其分销商提供的 onsemi NTR4170NT1G 的描述。
N-Channel 30 V 55 mOhm 0.78 W Surface Mount Power MOSFET - SOT-23
NTR4170NT1G N-CHANNEL MOSFET TRANSISTOR, 3.9 A, 30 V, 3-PIN SOT-23
N CHANNEL MOSFET, 30V, 4A, SOT-23, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 45mohm; Rds(on) Test Voltage Vgs: 10V; Thr
Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N Channel Mosfet, 30V, 4A, Sot-23; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):45Mohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Onsemi NTR4170NT1G
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.5 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance432 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation480 mW
Rds On Max55 mΩ
Resistance55 MΩ
Rise Time9.9 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time15.1 ns
Turn-On Delay Time6.4 ns
Dimensions
Height1.11 mm
Length3.04 mm
Width1.4 mm