价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTP5412NG | 27,650 | 261 | |||||||||
| Rochester Electronics | NTP5412NG | 27,650 | 2h | |||||||||
| Microchip USA | NTP5412NG | 177 | 600 | Tube | 19h | |||||||
| Win Source | WS-NTP5412NG | 8,800 | 35 | 4h | ||||||||
| Worldway Electronics | NTP5412NG | 16,003 | 7 | Tube | 2h |
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-01-06
LTD Date2011-07-02
相关零件
InfineonIRFZ48VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
InfineonIRFZ48NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
描述
由其分销商提供的 onsemi NTP5412NG 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 60A Tc 60A 125W 89ns
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
NTP5412NG, SINGLE MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time89 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.22 nF
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max14 mΩ
Rise Time115 ns
Turn-Off Delay Time41 ns