价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | NTMFS4925NT3G | 0 | 5K | Tape & Reel | 1d | |||||||
| Component Stockers USA | NTMFS4925NT3G | 13,185 | 1d | |||||||||
| Win Source | WS-NTMFS4925NT3G | 9,260 | 60 | 14h | ||||||||
| Worldway Electronics | NTMFS4925NT3G | 28,717 | 7 | Tape & Reel | 13h | |||||||
| Aztech | NTMFS4925NT3G | 4,053 | 9h |
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-04
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
相关零件
onsemiNTMFS4955NT1G
Single N-Channel Power MOSFET 30V, 48A, 6mΩ Power MOSFET 30V 48A 6mOhm Single N-Channel SO-8FL
onsemiNTMFS4841NT1G
Mosfet Transistor, N Channel, 57 A, 30 V, 4.7 Mohm, 11.5 V, 2.5 V Rohs Compliant: Yes
描述
由其分销商提供的 onsemi NTMFS4925NT3G 的描述。
Single N-Channel Power MOSFET 30V, 48A, 5.6mΩ Power MOSFET 30V 48A 6mOhm Single N-Channel SO-8FL
Nfet So8Fl 30V 80.5A 6Moh/Reel Rohs Compliant: Yes |Onsemi NTMFS4925NT3G
Trans MOSFET N-CH 30V 25.2A 5-Pin(4+Tab) SO-FL T/R
N-Channel 30V 9.7A , 48A 920mW , 23.2W Surface Mount 5-DFN MOSFET
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30V 48A 4.5m´Î@10V15A 23.2W 1.7V@250uA 143pF@15V N Channel 1.264nF@15V 10.8nC@4.5V -55¡Í~+150¡Í@(Tj) SO-8FL MOSFETs ROHS
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDFN
Number of Pins5
Number of Terminals6
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.264 nF
Max Operating Temperature150 °C
Max Power Dissipation23.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation23.2 W
Rds On Max5.6 mΩ
Rise Time32.7 ns
Turn-Off Delay Time16.4 ns
Turn-On Delay Time9.5 ns