onsemi NTJD1155LT1G

Name: onsemi NTJD1155LT1G
Brand: onsemi
SKU: NTJD1155LT1G

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

$ 0.114

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	3	NTJD1155LT1G	6,000	3K						0.065	12h
Newark	2	NTJD1155LT1G	7,074	5	Cut Tape		0.280	0.185	0.165	0.165
Future Electronics	5	NTJD1155LT1G	18,000	3K	Tape & Reel					0.106
Rochester Electronics		NTJD1155LT1G	400					0.080	0.066	0.059	10h
DigiKey	3	NTJD1155LT1GOSCT-ND	86,363	1	Cut Tape	0.440	0.273	0.172	0.114	0.114

数据表和文档

下载 onsemi NTJD1155LT1G 的数据表和制造商文档。

IHS

Datasheet8 页6 年前

Upverter

element14 APAC

JRH Electronics

Newark

库存历史记录

3 个月趋势:

-4.27%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-10-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NTJD1155LT1G 的描述。

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

onsemi

P-Channel 8 V 130 mOhm 400 mW Surface Mount Power MOSFET - SOT-363

Future Electronics

NTJD1155LT1G DUAL N/P-CHANNEL MOSFET TRANSISTOR, 1.3 A, 8 V, 6-PIN SC-88

RS (Formerly Allied Electronics)

Small Signal Field-Effect Transistor, 1.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

NFET SC88 8V HI SIDE SW; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.3A; Drain Source Voltage Vds: -8V; On Resistance Rds(on): 0.175ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: 1V; Power Diss

Farnell

P Channel Mosfet, -8V, Sc-88, Full Reel; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:8V; Drain Source Voltage Vds P Channel:8V; Continuous Drain Current Id N Channel:1.3A; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTJD1155LT1G

Newark