onsemi NTH4L080N120SC1

Name: onsemi NTH4L080N120SC1
Brand: onsemi
SKU: NTH4L080N120SC1

Transistor MOSFET N-Channel 1200V 50.4A 4-Pin TO-247 Tube

$ 5.974

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
Avnet	2	NTH4L080N120SC1	1,770	450				6.463	5.978	7h
Newark		NTH4L080N120SC1	63	1	3.250	3.250	3.250	3.250	3.250
Verical	3	NTH4L080N120SC1	328	1	6.169	6.169	6.169	6.169	6.169
Arrow Electronics		NTH4L080N120SC1	30	1	6.169	6.169	6.169	6.169	6.169
Rochester Electronics		NTH4L080N120SC1	72,200				5.980	5.350	5.030	4h

数据表和文档

下载 onsemi NTH4L080N120SC1 的数据表和制造商文档。

IHS

Datasheet8 页3 年前

Farnell

Upverter

TME

Future Electronics

库存历史记录

3 个月趋势:

-0.61%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi NTH4L080N120SC1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NTH4L080N120SC1 的描述。

Transistor MOSFET N-Channel 1200V 50.4A 4-Pin TO-247 Tube

Avnet Japan

SICFET N-CH 1200V 29A TO247-4 / N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L

Win Source

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

onsemi

Power Field-Effect Transistor, 29A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Semicontronic

1.2kV 29A 80m´Î@20V20A 170W 2.75V@5mA 6.5pF@800V N Channel 1.112nF@800V 56nC@-5~20V -55¡Í~+175¡Í@(Tj) TO-247-4 MOSFETs ROHS

Dasenic

Sic Mosfet, N-Ch, 20V, 29A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:20V; Power Dissipation:170W Rohs Compliant: Yes |Onsemi NTH4L080N120SC1

Newark