onsemi NTH4L020N090SC1

Name: onsemi NTH4L020N090SC1
Brand: onsemi
SKU: NTH4L020N090SC1

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

$ 17.85

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	NTH4L020N090SC1	4,500	450					18.412	17.276	21h
Newark		NTH4L020N090SC1	1,344	1		17.790	17.790	17.790	17.790	17.790
Rochester Electronics		NTH4L020N090SC1	900					17.490	15.650	14.730	19h
Verical		NTH4L020N090SC1	900	25				21.863	19.563	18.413
DigiKey		5556-NTH4L020N090SC1-ND	190	1	Tube	30.200	30.200	19.559	17.492	17.492

数据表和文档

下载 onsemi NTH4L020N090SC1 的数据表和制造商文档。

IHS

Datasheet8 页3 年前

Farnell

Future Electronics

库存历史记录

3 个月趋势:

-10.26%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-11-21

Lifecycle StatusProduction (Last Updated: 5 days ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi NTH4L020N090SC1 的描述。

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

EBEE

Mosfet, Sic, 900V, 116A, To-247 Rohs Compliant: Yes |Onsemi NTH4L020N090SC1

Newark

Power Field-Effect Transistor, 148A I(D), 900V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L

onsemi

MOSFET, N-CH, 900V, 116A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:116A; Drain Source Voltage Vds:900V; No. of Pins:4Pins; Rds(on) Test Voltage:18V; Power Dissipatio

element14 APAC