价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTGS4111PT1G | 9,000 | 3K | 13h | ||||||||
| Future Electronics | NTGS4111PT1G | 6,000 | 3K | Tape & Reel | ||||||||
| Newark | NTGS4111PT1G | 6,492 | 1 | Cut Tape | ||||||||
| Rochester Electronics | NTGS4111PT1G | 2,622 | 11h | |||||||||
| DigiKey | NTGS4111PT1GOSCT-ND | 16,015 | 1 | Cut Tape |
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
NXP SemiconductorsPMN49EN,135
Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiNTGS3455T1G
Mosfet; P-ch; Vdss -30VDC; Rds(on) 0.094 Ohm; Id -3.5A; TSOP-6; Pd 0.5W; Vgs +/-20V; Qg 9
描述
由其分销商提供的 onsemi NTGS4111PT1G 的描述。
P-Channel 30 V 38 mOhm 1.25 W Surface Mount Power MOSFET - TSOP-6
NTGS4111PT1G P-CHANNEL MOSFET TRANSISTOR, 4.7 A, 30 V, 6-PIN TSOP
Single P-Channel Power MOSFET -30V -4.7A 60mΩ
PFET TSOP 30V 4.7A 30V 60; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Di
P Channel Mosfet, -30V, 4.7A, Tsop, Full Reel; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:4.7A; Tensión Drenaje-Fuente Vds:-30V; Resistencia De Activación Rds(On):60Mohm; Tensión Vgs De Medición Rds(On):-10V |Onsemi NTGS4111PT1G
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTSOP
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.6 A
Current Rating-4.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance60 mΩ
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance750 pF
Max Operating Temperature150 °C
Max Power Dissipation630 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.25 W
Rds On Max60 mΩ
Resistance38 MΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-30 V
Dimensions
Height1 mm
Length3.1 mm
Width1.7 mm