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Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiNTA4151PT1
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 760mA Tj 760mA 301mW 8.2ns
onsemiNTA4153NT1
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 915mA Ta 915mA 300mW 4.4ns
NXP SemiconductorsPMR290XN,115
MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con
描述
由其分销商提供的 onsemi NTE4151PT1G 的描述。
NTE4151P: Small Signal MOSFET 20V 760mA 360 mOhm Single P-Channel SC-89 with ESD Protection
Single P-Channel Gate Zener Small Signal MOSFET -20V, -760mA, 360mΩ
Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-89-3
MOSFET, P-CH, VDSS -20V, RDS(ON) 0.26OHM, ID -760MA, SC-89, PD 313MW, VGS +/-6V
Trans MOSFET P-CH 20V 0.76A 3-Pin SC-89 T/R / MOSFET P-CH 20V 0.76A SC-89
MOSFET, P CHANNEL, -20V, -0.76A, SC-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -760mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:760Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:313Mw; No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi NTE4151PT1G.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC-89
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)760 mA
Current Rating-760 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time8.2 ns
Gate to Source Voltage (Vgs)6 V
Input Capacitance156 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation313 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation313 mW
Rds On Max360 mΩ
Resistance260 mΩ
Rise Time8.2 ns
Schedule B8541210080
Turn-Off Delay Time29 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height800 µm
Length1.6764 mm
Width950 µm