供应链
Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-10
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
描述
由其分销商提供的 onsemi NTD5867NLT4G 的描述。
Transistor: N-MOSFET; unipolar; 60V; 20A; 0.039ohm; 36W; -55+150 deg.C; SMD; TO252(DPAK)
Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ
N-Channel 60 V 39 mOhm 36 W Surface Mount Power MosFet -TO-252-3
NTD5867NLT4G N-CHANNEL MOSFET TRANSISTOR, 20 A, 60 V, 3-PIN DPAK
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 50 / Gate-Source Voltage V = 20 / Fall Time ns = 2.4 / Rise Time ns = 12.6 / Turn-OFF Delay Time ns = 18.2 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 36
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time2.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance675 pF
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingTape and Reel
Power Dissipation36 W
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time12.6 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time18.2 ns
Turn-On Delay Time6.5 ns
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm