价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTD4865N-1G | 13,050 | 1713 | |||||||||
| Rochester Electronics | NTD4865N-1G | 13,050 | 18h | |||||||||
| Microchip USA | NTD4865N-1G | 320 | 3500 | Tray | 1d | |||||||
| Win Source | WS-NTD4865N-1G | 65,000 | 190 | 19h | ||||||||
| Worldway Electronics | NTD4865N-1G | 22,871 | 7 | Tube | 2d |
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-21
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-09-30
LTD Date2010-03-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi NTD4865N-1G 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK
Trans MOSFET N-CH 25V 10.5A 3-Pin(3+Tab) IPAK Tube
8.5 A 25 V 0.0109 ohm N-CHANNEL Si POWER MOSFET
Power MOSFET 25V 42A Single N-Channel
Power Field-Effect Transistor, 8.5A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.9 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance827 pF
Max Operating Temperature175 °C
Max Power Dissipation33.3 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.92 W
Rds On Max10.9 mΩ
Rise Time19 ns
Turn-Off Delay Time17.4 ns