价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NTD4863NT4G | 180,925 | 19h | |||||||||
| Verical | NTD4863NT4G | 2,500 | 971 | |||||||||
| RS (Formerly Allied Electronics) | NTD4863NT4G | 0 | 1 | Bulk | 9h | |||||||
| Win Source | WS-NTD4863NT4G | 9,920 | 1030 | 20h | ||||||||
| Worldway Electronics | NTD4863NT4G | 9,431 | 7 | Tape & Reel | 19h |
供应链
Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-17
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2016-08-05
LTD Date2017-02-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
onsemiNTD4863N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.2A Ta 49A Tc 8.6A 1.95W 16.5ns
onsemiNTD4860N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 10.4A Ta 65A Tc 12.6A 2W 2.3ns
描述
由其分销商提供的 onsemi NTD4863NT4G 的描述。
Power MOSFET 25V 49A 9.3 mOhm Single N-Channel DPAK
Transistor MOSFET N-CH 25V 11.3A 3-Pin (2+Tab) DPAK T/R
NTD4863NT4G N-CHANNEL MOSFET TRANSISTOR, 49 A, 25 V, 3-PIN DPAK
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.2A Ta 49A Tc 11.3A 1.95W 16.5ns
Power Field-Effect Transistor, 9.2A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time16.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance990 pF
Max Operating Temperature175 °C
Max Power Dissipation36.6 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.95 W
Rds On Max9.3 mΩ
Rise Time16.5 ns
Schedule B8541290080
Turn-Off Delay Time20.2 ns
Turn-On Delay Time11.5 ns
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm