onsemi NGTG12N60TF1G

Name: onsemi NGTG12N60TF1G
Brand: onsemi
SKU: NGTG12N60TF1G

Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-3PF Tube

$ 0.988

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	NGTG12N60TF1G	267					1.190	0.988	0.881	14h
Flip Electronics	NGTG12N60TF1G	690								2d
Avnet	NGTG12N60TF1G	0	910					0.980	0.965	16h
Farnell	NGTG12N60TF1G	0	1		2.372*	1.813*	1.426*	1.086*	1.086*	2h
Mouser	863-NGTG12N60TF1G	341	1	Tube	2.900	1.880	1.880	1.000	1.000

数据表和文档

下载 onsemi NGTG12N60TF1G 的数据表和制造商文档。

element14 APAC

Datasheet0 页0 年前

Farnell

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-27

Lifecycle StatusEOL (Last Updated: 5 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi NGTG12N60TF1G 的描述。

Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-3PF Tube

Verical

IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L N-Channel IGBT, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L

onsemi

ON SEMICONDUCTOR NGTG12N60TF1GIGBT Single Transistor, 24 A, 1.4 V, 54 W, 600 V, TO-3PF, 3 Pins

Fly-Wing Technology

IGBT, SINGLE, N CH, 600V, 24A, TO-3PF-3

element14 APAC

54W 1.4V 600V 24A TO-3PF 15.5mm*5.5mm*26.5mm

UnikeyIC

Insulated Gate Bipolar Transistor

IHS

IGBT, SINGLE, N CH, 600V, 24A, TO-3PF-3; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 54W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-3PF; No. o

Farnell