相关零件
InfineonIRGS14C40LPBF
IGBT with on-chip Gate-Emitter and Gate-Collector clamps | IGBT 430V 20A 125W D2PAK
InfineonIRGS14C40LTRLP
IGBT with on-chip Gate-Emitter and Gate-Collector clamps | IGBT 430V 20A 125W D2PAK
描述
由其分销商提供的 onsemi NGB8206NT4G 的描述。
Trans IGBT Chip N-CH 390V 20A 3-Pin(2+Tab) D2PAK T/R
N-Channel Ignition IGBT 20 A, 350 V
IGBTs 20A, 350V, Ignition N-Channel
NGB8206NT4G, SINGLE BIPOLAR TRANSISTORS;
INSULATED GATE BIPOLAR TRANSISTO
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage350 V
Collector Emitter Voltage (VCEO)390 V
Current Rating20 A
Element ConfigurationSingle
Fall Time14 µs
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation150 W
Rise Time8 µs
Voltage Rating (DC)350 V