供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRLL3303TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
描述
由其分销商提供的 onsemi NDT452AP 的描述。
P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -5 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 30 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.1
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)5 A
Current5 A
Current Rating-5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.8 mm
Width6.7 mm