onsemi NDS7002A

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

onsemi N-Channel Enhancement Mode MOSFET, Vds=60V, 280mA, SOT-23, SMD, 3-Pin

Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 280 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 300

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.