onsemi NDS332P

Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -1A, 0.41Ω

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.