供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2016-01-24
LTD Date2016-07-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi MTP50P03HDLG 的描述。
Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level
MOSFET, POWER;P-CH;VDSS 30VDC;RDS(ON) 0.02OHM;ID 50A;TO-220AB;PD 125W;VGS +/-15V
Trans MOSFET P-CH 30V 50A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 50A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: -1.5V; Power Dissipatio
P Channel Mosfet, -30V, 50A, To-220Ab; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:50A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):25Mohm; Tensión Vgs De Medición Rds(On):5V |Onsemi MTP50P03HDLG
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)50 A
Current Rating-50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time218 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance4.9 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time340 ns
Threshold Voltage-1.5 V
Turn-Off Delay Time90 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)-30 V
Dimensions
Height14.478 mm
Length10.2616 mm
Width4.826 mm